Multiple Coulomb scattering in thin silicon

Light Scattering in Microcrystalline Silicon Thin Film Cells

Different optical characterization methods were applied to a series of microcrystalline silicon thin films, either as grown, textured, or subsequently polished, mirror-like. They reveal contributions of bulk and surface light scattering effects to the phenomenon of optical absorption enhancement. The enhanced light absorption in textured layers is mainly due to a longer optical path as a result...

Theory Op Multiple Coulomb Scattering Prom Extended Nuclei

Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility (μ) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform a combined experimental and theoretical study on at...

Scattering in the PT -symmetric Coulomb potential

Scattering on the PT -symmetric Coulomb potential is studied along a Ushaped trajectory circumventing the origin in the complex x plane from below. This trajectory reflects PT symmetry, sets the appropriate boundary conditions for bound states and also allows the restoration of the correct sign of the energy eigenvalues. Scattering states are composed from the two linearly independent solutions...

Coulomb Scattering in a Strong Magnetic Field

The presence of a strong magnetic eld intrinsically changes the orbit of electrons in their Coulomb interactions with ions for a range of parameters. The characteristic scale for the orbit modi cation is r0 = (Zme=4 0B) where Ze is the ion charge, me the electron mass and B the magnetic eld strength. The scale length is comparable to the interparticle spacing when n 1=3 e r0 = (!pe=!ce) 2=3(Z=4...